Search results for " GaInNAS"

Quantum well intermixing in GaInNAs/GaAs structures

2003

We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. …

High-power picosecond quasi-CW 1.3 µm Nd-laser passively modelocked using novel low-loss GaInNAs SBRs

2003

1.3 µm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

2003

A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 mum. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth,was obtained at 12.8 dB peak gain.

Selective modification of bandgap in GaInNAs/GaAs structures by quantum well intermixing

2003

Characterization of selective quantum well intermixing in 1.3 µm GaInNAs/GaAs structures

2003

Selective modification of bandgaps of GaInNAs/GaAs structures by quantum well intermixing techniques

2003

Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques

2003

We report the unambiguous demonstration of controlled quantum well intermixing (QWI) in the technologically important GaInNAs/ GaAs 1.3 mum material system. QWI is a key technique to selectively modify the band gap of quantum wells, which has found broad application in semiconductor lasers and photonic integrated circuits (PICs). Extending such technology to GaInNAs/GaAs structures is highly desirable due to the technologically advantageous properties of this material system. Here, we investigate well-characterized GaInNAs quantum well material which has been annealed "to saturation" before QWI processing to allow unambiguous interpretation of results. After RTA at 700 degreesC for similar …

Low-loss 1.3 µm GaInNAs saturable Bragg reflector for high-power picosecond neodymium lasers

2002

GaInNAs VCSEL structure as a modelocking element for a 1.3 µm Nd:YVO4 laser

2001

1.3 µm GaInNAs monolithic vertical-cavity semiconductor optical amplifier

2003